eGaN® FET Drivers and Layout Considerations

Published by Efficient Power Conversion Corporation (EPC)

When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. 

eGaN FETs differ from their silicon counterparts because of their significantly faster switching speeds and consequently have different requirements for gate drive, layout, and thermal management which can all be interactive.

Download this whitepaper to learn more. 

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